Samsung 860 evo 250gb sata iii 6gb/s v
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Samsung 860 EVO
The SSD khổng lồ trust
The newest edition to lớn the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND & a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible khung factors và capacities.
* Sources: NPD (US data from Jan. Năm ngoái to Oct. 2017) và GfK (EU5 data from Jan. Năm ngoái to Sep. 2017, trung quốc data from Jan. Năm nhâm thìn to Sep. 2017)
Enhanced performance
Speeds are more consistent, even with heavy workloads và multi-tasks. The 860 EVO performs at sequential writes up lớn 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up khổng lồ 550 MB/s. The TurboWrite buffer size* is upgraded from 12 GB lớn 78 GB for faster file transfer.
* Performance may vary based on SSD’s firmware version và system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and IOmeter 1.1.0. The sequential write performances after Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB.
* thử nghiệm system configuration: Intel chip core i5-3550 CPU
3.3 GHz, DDR3 1333 MHz 4 GB, OS – Windows 7 Ultimate x64, Chipset: asus P8H77-V
* The TurboWrite buffer form size varies based on the capacity of the SSD; 12 GB for 250 GB model, 22 GB for 500 GB model, 42 GB for 1 TB mã sản phẩm and 78 GB for 2/4 TB. For more information on the TurboWrite, please visit www.samsungssd.com
Boosted endurance
Safely store và render large sized 4K videos & 3D data used by the latest applications, up to 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND giải pháp công nghệ gives you up khổng lồ 2,400 TBW, or is backed by a 5-year limited warranty.*
* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB model and 2,400 TBW for 4 TB model.
* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package
Smart compatibility
Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm & a new MJX controller generate higher speeds, và the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.
Multi form factors
Whatever kích thước your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs & laptops, & the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.
Samsung Magician
Management software
Samsung Magician software is designed to help you manage your SSD with a simple and intuitive user interface.
Firmware update
Get notifications when new firmware is released, & easily install updates for enhanced performance, stability, & compatibility.
Performance benchmark
Check your SSD"s sequential & random read/write speeds, so you can maintain superb performance.
Data security
Protect data by selecting security options. The 860 EVO supports AES 256-bit hardware-based encryption và is compliant with TCG Opal & IEEE 1667.
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| General |
| Samsung |
| 860 EVO |
| MZ-N6E250BW |
| Samsung 860 EVO Series MZ-N6E250BW Internal Solid State Drive (SSD), M.2 (2280) size Factor, 250GB Capacity, Up lớn 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF). |
| Specifications |
| Client PCs |
| 250 GB (1 GB=1 Billionbyte by IDEMA) |
| M.2 2280 |
| SATA III |
| Max 80.15 x 22.15 x 2.38 (mm) (W x H x D) |
| Max 8.0g |
| Samsung V-NAND 3bit MLC |
| Samsung MJX Controller |
| 512 MB Low power nguồn DDR4 SDRAM |
| Magician Software for SSD management |
| Not Available |
| 5 Year Limited Warranty or 150 TBW Limited Warranty |
| Special Feature |
| TRIM Supported |
| S.M.A.R.T Supported |
| Auto Garbage Collection Algorithm |
| AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
| Yes |
| Yes |
| Performance |
| Up to 550 MB/sec |
| Up to 520 MB/sec |
| Up khổng lồ 97,000 IOPS |
| Up lớn 88,000 IOPS |
| Up to lớn 10,000 IOPS |
| Up khổng lồ 42,000 IOPS |
| Environment |
| Average: 2.2 WattsMaximum: 4.0 Watts (Burst mode) |
| Max. 50mW |
| 1.5 Million Hours Reliability (MTBF) |
| 0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended) |
| 1500G , duration 0.5m sec, 3 axis |
What is V-NAND technology?Shedding light on a whole new standard of capacity and performance.
Samsung V-NAND giải pháp công nghệ overcomes the capacity limitations of traditional 2d NAND technology with its revolutionary vertical design. V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference. The synergy of both structural and material innovations leads khổng lồ improved speed, power efficiency, & endurance.
Vertical expansion breaks through horizontal limit
Samsung revolutionized the storage industry by shifting the planar NAND to lớn a vertical structure. Samsung V-NAND technology features a unique design that stacks 48 layers on đứng đầu of one another instead of trying lớn decrease the cells’ pitch size. Samsung used Channel Hole giải pháp công nghệ (CHT) lớn enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.
Material innovation that no one can match
Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF giải pháp công nghệ which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges khổng lồ maintain cell integrity.
This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges lớn prevent data corruption caused by cell-to-cell interference.
Vertical architecture paves the way for amplified capacity
Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND công nghệ lets heavy-workload users & data centers store and handle more data with greatly improved capacity.
Samsung V-NAND enables up lớn 100 layers of cells khổng lồ be stacked with the potential lớn scale the mật độ trùng lặp từ khóa up khổng lồ 1 Terabit. The 2d planar NAND density ceiling can only reach the minimum density of V-NAND.
Innovative algorithms equal faster performance
Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.
V-NAND does not need khổng lồ go through a complex program algorithm khổng lồ write data, and this enables the memory lớn write data up lớn two times faster than traditional 2d planar NAND flash memory.
Unprecedented nguồn efficiency
Since V-NAND công nghệ has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power consumption is substantially lowered by up to 45 percent compared lớn planar NAND memory.
Embedded high endurance to store your valuable data
Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, và employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.
In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.
